Aluminum Nitride (AlN) – CeramAlum™

Aluminum Nitride (AlN) is an excellent material to use if high thermal conductivity and electrical insulation properties are required, which makes it an ideal material for use in thermal management and electrical applications. Additionally, AlN is a common alternative to Beryllium Oxide (BeO) in the semiconductor industry as it is not a health hazard when machined. Aluminum Nitride has electrical insulation properties and a coefficient of thermal expansion that closely matches that of Silicon wafer material, making it a useful material for electronics applications where high temperatures and heat dissipation are often a problem.

Material Advantages

  • Over five times the thermal conductance of Alumina
  • Enables high performing devices to function faster and better in smaller devices
  • No toxic issues of beryllia
  • Good plasma resistance
  • Excellent thermal shock performance


  • High power electrical insulators
  • Power electronics
  • Heat spreaders
  • Heat sinks
  • Water cooled heatsinks
  • Laser heatsink power rectifiers
  • Laser components
  • Aerospace, power electronics, rectifiers supplied to ISO9001/2015

Aluminum Nitride Properties